Sunday, 1 November 2026
Sign in
VI EN
Standing Office 81 (SOVNPA 81) emblem Viet Nam NVietnam National Presiding Agency
on Countering the Proliferation of Weapons of Mass Destruction Standing Office 81
Notices

Targeted financial sanctions obligations and designated lists relating to the proliferation of weapons of mass destruction and proliferation financing

Notices

30 October 2026UN Security Council updates the sanctions list (30/10/2026)

3C001Hetero-epitaxial materials, not specified in 3C507, consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:

List
EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
Originating regime
Thỏa ước Wassenaar
a. Silicon (Si);
b. Germanium (Ge);
c. Silicon carbide (SiC);
d. "III/V compounds" of gallium or indium;
e. Gallium Oxide (Ga2O3); or
f. Diamond.
Note:
3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.