- List
- EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
- Originating regime
- Quốc gia/EU
a. Equipment designed for epitaxial growth as follows:
4. Equipment designed for epitaxial growth of silicon (Si) or silicon germanium (SiGe), and having all of the following:
a. At least one preclean chamber designed to provide a surface preparation means to clean the surface of the wafer; and
b. An epitaxial deposition chamber designed to operate at a temperature below 958 K (685 °C).
Note:
3B501.a.4. includes Atomic Layer Epitaxy (ALE) equipment.
f. Lithography equipment as follows:
1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
a.
Not used;
b. Having all of the following:
1. A light source wavelength equal to or longer than 193 nm;
2. Capable of producing a pattern with a 'Minimum Resolvable Feature size' ('MRF') of 45 nm or less; and
3. A maximum 'dedicated chuck overlay' value of less than or equal to 1,50 nm
Technical Notes:
For the purposes of 3B501.f.1.b.:
1. The 'Minimum Resolvable Feature size' (‘MRF’) is calculated by the following formula:
where, the K factor = 0,25.
'MRF' is also known as resolution.
2. 'Dedicated chuck overlay' is the alignment accuracy of a new pattern to an existing pattern printed on a wafer by the same lithographic system. 'Dedicated chuck overlay' is also known as single machine overlay.
N.B. SEE ALSO 3B001.f.1.
k. Equipment designed for dry etching having any of the following:
1. Equipment designed or modified for isotropic dry etching, having a largest 'silicon germanium-to-silicon (SiGe:Si) etch selectivity' of greater than or equal to 100:1; or
2. Equipment designed or modified for anisotropic dry etching, having all of the following;
a. Radio Frequency (RF) power source(s) with at least one pulsed RF output;
b. One or more fast gas switching valve(s) with switching time less than 300 milliseconds; and
c. Electrostatic chuck with twenty or more individually controllable variable temperature elements.
Note 1:
3B501.k. includes etching by 'radicals', ions, sequential reactions, or non-sequential reaction.
Note 2:
3B501.k.2. includes etching using RF pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, cyclic injection and purging of gases combined with a plasma, plasma atomic layer etching, or plasma quasi-atomic layer etching.
Technical Notes:
For the purposes of 3B501.k.:
1. 'Silicon germanium-to-silicon (SiGe:Si) etch selectivity' is measured for a germanium concentration of greater than or equal to 30 % (Si0,70 Ge0,30).
2. 'Radical' is defined as an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
l. ‘Extreme Ultraviolet’ (‘EUV’) masks and ‘EUV’ reticles, designed for integrated circuits, not specified by 3B001.g., and having a mask "substrate blank" specified by 3B001.j.;
Technical Notes:
1. For the purposes of 3B501.l., masks or reticles with a mounted pellicle are considered masks and reticles.
2. For the purposes of 3B501.l., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
m. 'Pellicles' specially designed for ‘EUV’ lithography.
Technical Notes:
1. For the purposes of 3B501.m., a 'pellicle' is a membrane integrated with a frame, designed to protect a mask or reticle from particle contamination.
2. For the purposes of 3B501.m., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
n. Semiconductor manufacturing deposition equipment as follows:
1. Atomic Layer Deposition (ALD) equipment as follows:
a. Equipment designed for the deposition of tungsten to fill an entire interconnect or in a channel less than 40 nm wide;
b. Equipment designed for 'area selective deposition' of a metal or metal nitride sidewall barrier using an organometallic compound precursor;
Technical Note:
For the purposes of 3B501.n.1.b., 'area selective deposition' refers to the deposition of material on the sidewall but not the bottom of a feature.
c. Equipment designed for the deposition of a 'work function metal' composed of titanium aluminium carbide (TiAlC) and having a work function greater than 4,0 eV, and having all of the following:
1. More than one metal source of which one is functioning as an aluminium precursor source; and
2. A precursor vessel designed to operate at a temperature greater than or equal to 303,15 K (30 °C);
Technical Note:
For the purposes of 3B501.n.1.c., 'work function metal' is a material that controls the threshold voltage of a transistor.
2. Equipment designed for cobalt electroplating or cobalt electroless-plating deposition processes;
3. Equipment designed for Chemical Vapour Deposition (CVD) of cobalt fill metal;
4. Equipment designed for 'selective bottom-up' Chemical Vapour Deposition (CVD) of tungsten fill metal;
Technical Note:
For the purposes of 3B501.n.4., 'selective bottom-up' refers to the preferential deposition of material on the bottom relative to the sidewall.
5. Equipment designed for void-free plasma enhanced deposition of a layer with a dielectric constant less than 3,3, in 'gaps' having an 'aspect ratio' equal to or greater than 1:1 and a width less than 25 nm;
Technical Notes:
For the purposes of 3B501.n.5.:
1. A 'gap' is the space between metal lines.
2. The 'aspect ratio' (depth : width) is defined as the ratio of the depth to the width of the gap between the metal lines.
6. Equipment designed for the deposition of a ruthenium layer using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
7. Equipment designed for multistep processing in multiple chambers and maintaining high vacuum or inert environment during transfer between process steps, as follows:
a. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia (NH3), while maintaining the wafer substrate at a temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C);
2. Surface treatment plasma process using oxygen or ozone, while maintaining the wafer substrate at a temperature greater than 313,15 K (40 °C) and less than 773,15 K (500 °C); and
3. Deposition of a tungsten layer while maintaining the wafer substrate at a temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C);
b. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Surface treatment plasma process using a remote plasma generator and an ion filter; and
2. Deposition of a cobalt layer selectively onto copper using an organometallic compound precursor;
c. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Deposition of a titanium nitride (TiN) or tungsten carbide (WC) layer, using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
2. Deposition of a cobalt layer using a physical sputter deposition technique and having a process pressure greater than 1,33 × 10-1 Pa (1 mTorr) and less than 1,33 × 101 Pa (100 mTorr), while maintaining the wafer substrate at temperature less than 773,15 K (500 °C); and
3. Deposition of a cobalt layer using an organometallic compound precursor and having a process pressure greater than 1,33 × 102 Pa (1 Torr) and less than 1,33 × 104 Pa (100 Torr), while maintaining the wafer substrate at temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
d. Equipment designed to fabricate copper interconnects by performing all of the following processes:
1. Deposition of a cobalt or ruthenium layer using an organometallic compound precursor and having a process pressure greater than 1,33 × 102 Pa (1 Torr) and less than 1,33 × 104 Pa (100 Torr), while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C); and
2. Deposition of a copper layer using a Physical Vapour Deposition (PVD) technique having a process pressure greater than 1,33 × 10-1 Pa (1 mTorr) and less than 1,33 × 101 Pa (100 mTorr), while maintaining the wafer substrate at a temperature less than 773,15 K (500 °C);
8. Equipment designed to fabricate a metal contact by multistep processing within a single chamber by performing all of the following:
a. Deposition of a tungsten layer, using an organometallic compound precursor, while maintaining the wafer substrate temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C); and
b. Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia (NH3).
4. Equipment designed for epitaxial growth of silicon (Si) or silicon germanium (SiGe), and having all of the following:
a. At least one preclean chamber designed to provide a surface preparation means to clean the surface of the wafer; and
b. An epitaxial deposition chamber designed to operate at a temperature below 958 K (685 °C).
Note:
3B501.a.4. includes Atomic Layer Epitaxy (ALE) equipment.
f. Lithography equipment as follows:
1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
a.
Not used;
b. Having all of the following:
1. A light source wavelength equal to or longer than 193 nm;
2. Capable of producing a pattern with a 'Minimum Resolvable Feature size' ('MRF') of 45 nm or less; and
3. A maximum 'dedicated chuck overlay' value of less than or equal to 1,50 nm
Technical Notes:
For the purposes of 3B501.f.1.b.:
1. The 'Minimum Resolvable Feature size' (‘MRF’) is calculated by the following formula:
where, the K factor = 0,25.
'MRF' is also known as resolution.
2. 'Dedicated chuck overlay' is the alignment accuracy of a new pattern to an existing pattern printed on a wafer by the same lithographic system. 'Dedicated chuck overlay' is also known as single machine overlay.
N.B. SEE ALSO 3B001.f.1.
k. Equipment designed for dry etching having any of the following:
1. Equipment designed or modified for isotropic dry etching, having a largest 'silicon germanium-to-silicon (SiGe:Si) etch selectivity' of greater than or equal to 100:1; or
2. Equipment designed or modified for anisotropic dry etching, having all of the following;
a. Radio Frequency (RF) power source(s) with at least one pulsed RF output;
b. One or more fast gas switching valve(s) with switching time less than 300 milliseconds; and
c. Electrostatic chuck with twenty or more individually controllable variable temperature elements.
Note 1:
3B501.k. includes etching by 'radicals', ions, sequential reactions, or non-sequential reaction.
Note 2:
3B501.k.2. includes etching using RF pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, cyclic injection and purging of gases combined with a plasma, plasma atomic layer etching, or plasma quasi-atomic layer etching.
Technical Notes:
For the purposes of 3B501.k.:
1. 'Silicon germanium-to-silicon (SiGe:Si) etch selectivity' is measured for a germanium concentration of greater than or equal to 30 % (Si0,70 Ge0,30).
2. 'Radical' is defined as an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
l. ‘Extreme Ultraviolet’ (‘EUV’) masks and ‘EUV’ reticles, designed for integrated circuits, not specified by 3B001.g., and having a mask "substrate blank" specified by 3B001.j.;
Technical Notes:
1. For the purposes of 3B501.l., masks or reticles with a mounted pellicle are considered masks and reticles.
2. For the purposes of 3B501.l., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
m. 'Pellicles' specially designed for ‘EUV’ lithography.
Technical Notes:
1. For the purposes of 3B501.m., a 'pellicle' is a membrane integrated with a frame, designed to protect a mask or reticle from particle contamination.
2. For the purposes of 3B501.m., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
n. Semiconductor manufacturing deposition equipment as follows:
1. Atomic Layer Deposition (ALD) equipment as follows:
a. Equipment designed for the deposition of tungsten to fill an entire interconnect or in a channel less than 40 nm wide;
b. Equipment designed for 'area selective deposition' of a metal or metal nitride sidewall barrier using an organometallic compound precursor;
Technical Note:
For the purposes of 3B501.n.1.b., 'area selective deposition' refers to the deposition of material on the sidewall but not the bottom of a feature.
c. Equipment designed for the deposition of a 'work function metal' composed of titanium aluminium carbide (TiAlC) and having a work function greater than 4,0 eV, and having all of the following:
1. More than one metal source of which one is functioning as an aluminium precursor source; and
2. A precursor vessel designed to operate at a temperature greater than or equal to 303,15 K (30 °C);
Technical Note:
For the purposes of 3B501.n.1.c., 'work function metal' is a material that controls the threshold voltage of a transistor.
2. Equipment designed for cobalt electroplating or cobalt electroless-plating deposition processes;
3. Equipment designed for Chemical Vapour Deposition (CVD) of cobalt fill metal;
4. Equipment designed for 'selective bottom-up' Chemical Vapour Deposition (CVD) of tungsten fill metal;
Technical Note:
For the purposes of 3B501.n.4., 'selective bottom-up' refers to the preferential deposition of material on the bottom relative to the sidewall.
5. Equipment designed for void-free plasma enhanced deposition of a layer with a dielectric constant less than 3,3, in 'gaps' having an 'aspect ratio' equal to or greater than 1:1 and a width less than 25 nm;
Technical Notes:
For the purposes of 3B501.n.5.:
1. A 'gap' is the space between metal lines.
2. The 'aspect ratio' (depth : width) is defined as the ratio of the depth to the width of the gap between the metal lines.
6. Equipment designed for the deposition of a ruthenium layer using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
7. Equipment designed for multistep processing in multiple chambers and maintaining high vacuum or inert environment during transfer between process steps, as follows:
a. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia (NH3), while maintaining the wafer substrate at a temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C);
2. Surface treatment plasma process using oxygen or ozone, while maintaining the wafer substrate at a temperature greater than 313,15 K (40 °C) and less than 773,15 K (500 °C); and
3. Deposition of a tungsten layer while maintaining the wafer substrate at a temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C);
b. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Surface treatment plasma process using a remote plasma generator and an ion filter; and
2. Deposition of a cobalt layer selectively onto copper using an organometallic compound precursor;
c. Equipment designed to fabricate a metal contact by performing all of the following processes:
1. Deposition of a titanium nitride (TiN) or tungsten carbide (WC) layer, using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
2. Deposition of a cobalt layer using a physical sputter deposition technique and having a process pressure greater than 1,33 × 10-1 Pa (1 mTorr) and less than 1,33 × 101 Pa (100 mTorr), while maintaining the wafer substrate at temperature less than 773,15 K (500 °C); and
3. Deposition of a cobalt layer using an organometallic compound precursor and having a process pressure greater than 1,33 × 102 Pa (1 Torr) and less than 1,33 × 104 Pa (100 Torr), while maintaining the wafer substrate at temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C);
d. Equipment designed to fabricate copper interconnects by performing all of the following processes:
1. Deposition of a cobalt or ruthenium layer using an organometallic compound precursor and having a process pressure greater than 1,33 × 102 Pa (1 Torr) and less than 1,33 × 104 Pa (100 Torr), while maintaining the wafer substrate at a temperature greater than 293,15 K (20 °C) and less than 773,15 K (500 °C); and
2. Deposition of a copper layer using a Physical Vapour Deposition (PVD) technique having a process pressure greater than 1,33 × 10-1 Pa (1 mTorr) and less than 1,33 × 101 Pa (100 mTorr), while maintaining the wafer substrate at a temperature less than 773,15 K (500 °C);
8. Equipment designed to fabricate a metal contact by multistep processing within a single chamber by performing all of the following:
a. Deposition of a tungsten layer, using an organometallic compound precursor, while maintaining the wafer substrate temperature greater than 373,15 K (100 °C) and less than 773,15 K (500 °C); and
b. Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia (NH3).