- List
- EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
- Originating regime
- Thỏa ước Wassenaar
a. Resists designed for semiconductor lithography as follows:
1. Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
2. Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;
b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;
c. Not used;
d. All resists optimised for surface imaging technologies;
e. All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.
1. Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
2. Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;
b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;
c. Not used;
d. All resists optimised for surface imaging technologies;
e. All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.