3.E.3.Other "technology" for the "development" or "production" of the following:

a. Vacuum microelectronic devices;
b. Hetero-structure semiconductor electronic devices such as High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), quantum well and super lattice devices;
Note 3.E.3.b. does not apply to "technology" for HEMTs operating at frequencies lower than 31.8 GHz and HBTs operating at frequencies lower than 31.8 GHz.
c. "Superconductive" electronic devices;
d. Substrates of diamond for electronic components;
e. Substrates of Silicon-on-Insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;
f. Substrates of silicon carbide for electronic components;
g. "Vacuum electronic devices" operating at frequencies of 31.8 GHz or higher;
h. Substrates of gallium oxide for electronic components.